rev.0 aug. 01, 2008 page 1 of 4 HL6501MG visible high power laser diode ode2031-00 (m) rev.0 aug. 01, 2008 description the HL6501MG is a 0.65 m band algainp laser diode (ld) with a multi-quantum well (mqw) structure. it is suitable as a light source for large capacity optical disc memories and various other types of optical equipment. hermetic sealing of the small package ( 5.6 mm) assures high reliability. features ? high output power: 35 mw (cw) ? visible light output: p = 658 nm typ ? small package: 5.6 mm ? low astigmatism: 6 m typ (p o = 5 mw) ? single longitudinal mode ld pd 1 3 internal circuit package type ? HL6501MG: mg 2 absolute maximum ratings (t c = 25c) item symbol ratings unit optical output power p o 35 mw pulse optical output power p o(pulse) 50 * mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature topr ?10 to +60 c storage temperature tstg ?40 to +85 c note: pulse condition : pulse width = 100 ns , duty = 50% optical and electrical characteristics (t c = 25c) item symbol min typ max unit test conditions threshold current ith 30 45 70 ma ? operating voltage v op 2.1 2.6 3.0 v p o = 30 mw slope efficiency s 0.5 0.75 1.0 mw/ma 18 (mw) / (i (24mw) ? i (6mw) ) beam divergence parallel to the junction // 7 8.5 10.5 p o = 30 mw beam divergence perpendicular to the junction ? 18 22 26 p o = 30 mw astigmatism a s ? 6 ? m p o = 5 mw, na = 0.55 lasing wavelength p 645 658 665 nm p o = 30 mw monitor current i s 0.05 0.2 1.5 ma p o = 30 mw, v r(pd) = 5 v
HL6501MG rev.0 aug. 01, 2008 page 2 of 4 typical characteristic curves 0200 160 120 80 40 50 40 30 optical output power, p o (mw) 20 10 0 foward current, i f (ma) optical output power vs. forward current slope efficiency, s (mw/ma) case temperature, t c (c) slope efficiency vs. case temperature 60 1.0 0.8 0.6 0.4 0.2 0 010 50 40 30 20 t c = 60c t c = 25c t c = 0c 70 lasing wavelength, p (nm) case temperature, t c (c) lasing wavelength vs. case temperature 060 10 50 40 30 20 675 670 665 660 655 650 70 intensity angle, ( ) far feild pattern -40 -10 0 102030 -20 -30 40 1.0 0.8 0.6 0.4 0.2 0 p o = 30 mw t c = 25c perpendicular parallel p o = 30 mw monitor current, i s (ma) case temperature, t c (c) monitor current vs. case temperature 060 1.0 0.8 0.6 0.4 0.2 0 p o = 30 mw v r(pd) = 5 v 10 50 40 30 20 threshold current, ith (ma) case temperature, t c (c) threshold current vs. case temperature 60 010 50 40 30 20 100 10 70 80
HL6501MG rev.0 aug. 01, 2008 page 3 of 4 package dimensions opj code jedec jeita mass (reference value) ld/mg ? ? 0.3 g 1 2 3 5.6 +0 ?0.025 1.0 0.1 (0.4) (90) 1.6 0.2 0.4 +0.1 ?0 4.1 0.3 3.55 0.1 0.25 glass 1.27 3 ? 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 1 2 3 2.0 0.2 emitting point as of july, 2002 unit: mm
HL6501MG rev.0 aug. 01, 2008 page 4 of 4 cautions 1. opnext japan,inc.(opj) neither warrants nor grants licenses of any our rights or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. opj bears no responsibility for problems that may arise with third pa rty?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. opj makes every attempt to ensure that its products are of high quality and reliability. however, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly th reaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion cont rol, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used w ithin the ranges guaranteed by opj particularly for maximum rating, operating supply voltage range, heat radiation characte ristics, installation conditions and other characteristics. opj bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating opj product does not cause bodily injury, fire or other consequential damage due to operation of the opj product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any fo rm, the whole or part of this document without written approval from opj. 7. contact our sales office for any questions regarding this document or opj products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent. 2. this product contains gallium arsenide (gaas), which may se riously endanger your health even at very low doses. please avoid treatment which may creat e gaas powder or gas, such as disassembly or performing chemical experiments, when you handle the product. when disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. definition of items shown in this cas is in accordance w ith that shown in opto device databook issued by opj unless otherwise specified. sales offices op next ja p an, inc . taka g i bld g ., 3f, 1-3-9, iwamoto-cho, chi y oda-ku, tok y o 101-0032, japan tel: (03) 3865-5591 for the detail of opnext, inc., see the following homepage: ?2008 opnext japan, inc., all rights reserved. printed in japan. colophon 5.0 japan (japanese) http://www.opnext.com/jp/products/ other area (english) http://www.opnext.com/products/
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